Method for fabricating semiconductor device with liner structure

Abstract

The present application discloses a method for fabricating a semiconductor device. The method includes: providing a substrate; forming an impurity region in the substrate; forming a first dielectric layer on the substrate; forming an opening along the first dielectric layer to expose the impurity region; conformally forming a layer of first material in the opening; forming a layer of filler material on the layer of first material to completely fill the opening; and performing a planarization process until the top surface of the first dielectric layer is exposed to turn the layer of first material into an intervening film and the layer of filler material into a filler layer. The intervening film includes a U-shaped cross-sectional profile and silicon carbide.

Dependencies are inferred from the claim text.