Interconnection structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Feng LEE, Wei-Ting CHEN, Chen-Chung LAI
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Abstract
A method for forming an interconnection structure includes depositing a dielectric layer over a first interconnect layer, wherein the first interconnect layer comprises a first metallization layer; forming a via opening in the dielectric layer, and forming a conductive via in the via opening. Forming the via opening includes: etching a recess in the dielectric layer above the first metallization layer; etching a first lateral recess in the dielectric layer at a sidewall of the recess; and after etching the first lateral recess, etching the recess downward to expose the first metallization layer.
Claims20
A method for forming an interconnection structure, comprising:
- depositing a dielectric layer over a first interconnect layer, wherein the first interconnect layer comprises a first metallization layer;
- forming a via opening in the dielectric layer, wherein forming the via opening comprises:
- etching a recess in the dielectric layer above the first metallization layer;
- etching a first lateral recess in the dielectric layer at a sidewall of the recess;
- and
- after etching the first lateral recess, etching the recess downward to expose the first metallization layer;
- and
- forming a conductive via in the via opening.
A method for forming an interconnection structure, comprising:
- depositing a dielectric layer over a first interconnect layer, wherein the first interconnect layer comprises a first metallization layer;
- forming a via opening in the dielectric layer above the first metallization layer, wherein forming the via opening comprises a plurality of repeating cycles, each of the cycles comprises an anisotropic dry etching process and an isotropic dry etching process;
- and
- forming a conductive via in the via opening.
An interconnection structure, comprising:
- a first interconnect layer comprising a first metallization layer;
- a second interconnect layer above the second interconnect layer, wherein the second interconnect layer comprises a second metallization layer;
- and
- a conductive via between the first interconnect layer and the second interconnect layer, wherein the conductive via comprises a main portion and at least one branch portion, the main portion of the conductive via connects the second metallization layer to the first metallization layer, and the at least one branch portion of the conductive via extends laterally from a sidewall of the main portion of the conductive via.
Dependencies are inferred from the claim text.