US 2025/0029852 A1Published application

Substrate processing method and substrate processing system

AssigneeTokyo Electron Limited

InventorHiroshi MARUMOTO

Life of this patent

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Abstract

Predicting of an etching amount distribution in a diametrical direction of an etching target includes: acquiring learning data including etching amount distribution when a surface of the etching target is etched under multiple different etching conditions; and predicting the etching amount distribution under prediction target etching conditions from following equations (1) to (6) by using the learning data. ER scan ( R ) = ER ref ( R ) × Ratio scan ( R ) ( 1 ) Ratio scan ( R ) = b 0 × exp ⁡ ( b 1 × T + b 2 ) + C ( 2 ) b 0 = f ⁡ ( S , V ) ( 3 ) b 1 = f ⁡ ( S , V ) ( 4 ) b 2 = f ⁡ ( S , V ) ( 5 ) T = ( L - R ) / V ( 6 )

Claims14

Dependent claims

A substrate processing method of processing a substrate, comprising:

etching a surface of an etching target on the substrate by supplying an etching liquid from an etching liquid supply to the surface, while rotating the etching target and reciprocating the etching liquid supply in a diametrical direction through a position above a rotation center of the etching target;
and
predicting an etching amount distribution in the diametrical direction of the etching target when etching the surface of the etching target under prediction target etching conditions
wherein the predicting of the etching amount distribution comprises:
acquiring learning data including etching amount distribution when the surface of the etching target is etched under multiple different etching conditions;
and
predicting the etching amount distribution under the prediction target etching conditions from following equations (1) to (6) by using the learning data:
ER
scan
(
R
)
=
ER
ref
(
R
)
×
Ratio
scan
(
R
)
(
1
)
Ratio
scan
(
R
)
=
b
0
×
exp
⁡
(
b
1
×
T
+
b
2
)
+
C
(
2
)
b
0
=
f
⁡
(
S
,
V
)
(
3
)
b
1
=
f
⁡
(
S
,
V
)
(
4
)
b
2
=
f
⁡
(
S
,
V
)
(
5
)
T
=
(
L
-
R
)
/
V
(
6
)
and
wherein, in the equations (1) to (6):
ERscan:
Etching amount when the etching liquid supply is reciprocated,
ERref:
Etching amount when the etching liquid supply is not reciprocated,
Ratioscan:
Scan ratio,
R:
Position from the center of the etching target,
T:
Non-discharge time during which the etching liquid is not supplied,
C:
Constant,
S:
Rotation speed when rotating the etching target,
V:
Scan speed when reciprocating the etching liquid supply, and
L:
Scan width when reciprocating the etching liquid supply.

120 more elements

A substrate processing system of processing a substrate, comprising:

a substrate holder configured to hold the substrate;
a rotating mechanism configured to rotate the substrate holder;
an etching liquid supply configured to supply an etching liquid from above a surface of an etching target on the substrate held by the substrate holder;
an etching apparatus equipped with a moving mechanism configured to move the etching liquid supply in a horizontal direction;
and
a control device and a program storage including a program,
wherein the program storage and the program are configured, with the control device, to perform:
etching the surface of the etching target by supplying the etching liquid from the etching liquid supply to the surface of the etching target, while rotating the etching target and reciprocating the etching liquid supply in a diametrical direction through a position above a rotation center of the etching target;
and
predicting an etching amount distribution in the diametrical direction of the etching target when etching the surface of the etching target under prediction target etching conditions, and
wherein the predicting of the etching amount distribution comprises:
acquiring learning data including etching amount distributions when the surface of the etching target is etched under multiple different etching conditions;
and
predicting the etching amount distribution under the prediction target etching condition from following equations (1) to (6) by using the learning data:
ER
scan
(
R
)
=
ER
ref
(
R
)
×
Ratio
scan
(
R
)
(
1
)
Ratio
scan
(
R
)
=
b
0
×
exp
⁡
(
b
1
×
T
+
b
2
)
+
C
(
2
)
b
0
=
f
⁡
(
S
,
V
)
(
3
)
b
1
=
f
⁡
(
S
,
V
)
(
4
)
b
2
=
f
⁡
(
S
,
V
)
(
5
)
T
=
(
L
-
R
)
/
V
(
6
)
and
wherein, in the equations (1) to (6):
ERscan:
Etching amount when the etching liquid supply is reciprocated,
ERref:
Etching amount when the etching liquid supply is not reciprocated,
Ratioscan:
Scan ratio,
R:
Position from the center of the etching target,
T:
Non-discharge time during which the etching liquid is not supplied,
C:
Constant,
S:
Rotation speed when rotating the etching target,
V:
Scan speed when reciprocating the etching liquid supply, and
L:
Scan width when reciprocating the etching liquid supply.

127 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/716,150Filed 22 Nov 2022
Priority: JP 2021-1980456 Dec 2021
Published: 23 Jan 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10P 72/0604
Apparatus for monitoring, sorting, marking, testing or measuring: process monitoring, e.g. flow or thickness monitoring
H10P 50/00
Etching of wafers, substrates or parts of devices
H10P 52/00
Grinding, lapping or polishing of wafers, substrates or parts of devices
H10P 72/0424
For wet etching: using mainly spraying means, e.g. nozzles

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Abstract

Facts

Application

18/716,150Filed 22 Nov 2022

Priority

JP 2021-1980456 Dec 2021

Published

23 Jan 2025

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10P 72/0604
Apparatus for monitoring, sorting, marking, testing or measuring: process monitoring, e.g. flow or thickness monitoring
H10P 50/00
Etching of wafers, substrates or parts of devices
H10P 52/00
Grinding, lapping or polishing of wafers, substrates or parts of devices
H10P 72/0424
For wet etching: using mainly spraying means, e.g. nozzles