Shaped faceplate for extreme edge film uniformity

A semiconductor processing faceplate, comprising:

• a body defining a top surface and a bottom surface of the faceplate, wherein:
• the bottom surface of the faceplate defines an annular protrusion and an annular groove that is positioned radially outward of the annular protrusion;
• an outer edge of the annular protrusion is within 5 mm of an inner edge of the annular groove;
• the faceplate defines a plurality of apertures through the faceplate, wherein a first subset of the plurality of apertures extend through the annular protrusion and a second subset of the plurality of apertures extend through the annular groove;
• and
• an outermost aperture of the plurality of apertures extends through the annular groove.

A method of processing a substrate, comprising:

• flowing a precursor into a processing chamber, wherein:
• the processing chamber comprises a faceplate and a substrate support on which a substrate is disposed;
• a processing region of the processing chamber is at least partially defined between the faceplate and the substrate support;
• a bottom surface of the faceplate defines an annular protrusion that is disposed directly above at least a portion of a radially outer 10% of the substrate and an annular groove that is positioned radially outward of the annular protrusion, wherein at least a portion of the annular groove extends radially outward beyond the substrate;
• the faceplate defines a plurality of apertures through the faceplate, wherein a first subset of the plurality of apertures extend through the annular protrusion and a second subset of the plurality of apertures extend through the annular groove;
• generating a plasma of the precursor within a processing region of the processing chamber;
• and
• depositing a material on the substrate.