Semiconductor device and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Han Lin, Sai-Hooi Yeong, Chi On Chui
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Abstract
Semiconductor devices and methods of manufacturing are presented wherein a gate dielectric is treated within an analog region of a semiconductor substrate. The gate dielectric may be treated with a plasma exposure and/or an annealing process in order to form a recovered region of the gate dielectric. A separate gate dielectric is formed within a logic region of the semiconductor substrate, and a first gate electrode and second gate electrode are formed over the gate dielectrics.
Claims20
A semiconductor device comprising:
- a logic device located in a logic region of a substrate, the logic device comprising:
- a first dielectric layer having a constant density throughout the first dielectric layer;
- and
- a first gate electrode overlying the first dielectric layer;
- and
- an analog device located in an analog region of the substrate, the analog device comprising:
- a second dielectric layer, the second dielectric layer comprising a recovered region and a non-treated region, the recovered region having a different density than the non-treated region;
- and
- a second gate electrode overlying the second dielectric layer.
A semiconductor device comprising:
- a semiconductor substrate comprising a logic region and an analog region;
- a first gate dielectric overlying the logic region, the first gate dielectric having a constant density throughout the first gate dielectric;
- a second gate dielectric overlying the analog region, the second gate dielectric comprising a non-treated material;
- and
- a third gate dielectric overlying the second gate dielectric, the third gate dielectric having a different density than the second gate dielectric and comprising a recovered material.
A semiconductor device comprising:
- a first logic device with a first gate dielectric and a first gate electrode, the first gate dielectric comprising a first material, the first material having a first density throughout the first material;
- and
- a first analog device with a second gate dielectric and a second gate electrode, the second gate dielectric comprising a first region and a second region overlying the first region, the second region being a treated region and the first region being a non-treated region.
Dependencies are inferred from the claim text.