Semiconductor apparatus and manufacturing method of semiconductor apparatus

Abstract

A semiconductor apparatus includes a flat portion disposed in a predetermined region containing a central depth position of a semiconductor substrate, between a fist peak disposed in an upper surface side of the semiconductor substrate and a second peak disposed in a lower surface side of the semiconductor substrate, and having a substantially flat concentration higher than a bulk donor concentration in a donor concentration distribution in a depth direction of a semiconductor substrate. The entire oxygen chemical concentration between the first peak and the second peak ranges from 3×1015 atoms/cm3 to 2×1018 atoms/cm3.

Dependencies are inferred from the claim text.