Methods and compositions for trench formation using advanced track-based patterning processes

Abstract

A method for forming a semiconductor device can include coating a reversible overcoat layer over first mandrels on a substrate, inducing a crosslinking reaction within the reversible overcoat layer that renders the reversible overcoat layer insoluble to a developer and forms a crosslinked overcoat layer, diffusing acid particles from the first mandrels into first portions of the crosslinked overcoat layer, inducing a de-crosslinking reaction within the first portions of the crosslinked overcoat layer to form de-crosslinked regions, where unmodified regions of the crosslinked overcoat layer form second mandrels, and selectively removing the de-crosslinked regions with the developer such that the first mandrels and the second mandrels form a mandrel pattern over the substrate, where the developer has a solubility distance in a range of zero to seven in a Hansen Solubility Parameter space relative to methyl isobutyl carbinol.

Dependencies are inferred from the claim text.