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US 2025/0029836 A1Published application
Semiconductor device, manufacturing method thereof, and semiconductor storage device
AssigneeKioxia Corporation
InventorMasayuki KITAMURA
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes an oxide film containing first element and a conductive film provided to be in contact with the oxide film, containing metal element and oxygen element, and having conductivity. A range of a volume density of the oxygen element in the conductive film is different between cases where the metal element are tungsten (W), molybdenum (Mo), titanium (Ti), chromium (Cr), vanadium (V), iron (Fe), copper (Cu), tantalum (Ta), or niobium (Nb).
Claims3
A manufacturing method of a semiconductor device, comprising:
- forming an oxide film containing first element on a semiconductor substrate;
- and
- forming a conductive film on the oxide film by using a material gas that contains metal element, a reducing gas that reduces the metal element, and a carrier gas that introduces the material gas into the substrate, wherein
- at least one of the material gas, the reducing gas, and the carrier gas contains oxygen element, and
- a temperature of the substrate in formation of the conductive film is higher than a sublimation temperature of metal oxide of the metal element.
2 more elements
Dependencies are inferred from the claim text.