Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures

A method for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process, the method comprising:

• providing the substrate comprising the dielectric material surface into a reaction chamber;
• and
• depositing the molybdenum metal film directly on the dielectric material surface using a plurality of deposition cycles, wherein the each deposition cycle comprises:
• contacting the substrate with a pulse of a first vapor phase reactant comprising a molybdenum oxyhalide;
• and
• contacting the substrate with a second vapor phase reactant;
• wherein the second vapor phase reactant is continuously contacting the substrate through the plurality of deposition cycles.

A method for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process, the method comprising:

• providing the substrate comprising the dielectric material surface into a reaction chamber, wherein the substrate comprises one or more horizontal gaps;
• and
• depositing the molybdenum metal film directly on the dielectric material surface using a plurality of deposition cycles, wherein the each deposition cycle comprises:
• contacting the substrate with a pulse of a first vapor phase reactant comprising a molybdenum halide;
• and
• contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor comprising at least one of forming gas (H2+N2), an alkyl-hydrazine, an alcohol, an aldehyde, and a carboxylic acid;
• wherein the second vapor phase reactant is continuously contacting the substrate through the plurality of deposition cycles.