Substrate processing method
AssigneeASM IP Holding B.V.
InventorsSungBae Kim, Sungdae Woo, JuSeok Jeon, SeungRyul Lee, Hyunchul Kim, Yujin Kim
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Abstract
Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.
Claims26
A method of forming a film on a patterned substrate, the method comprising:
- providing the patterned substrate to a reaction chamber;
- supplying a first gas to the reaction chamber;
- supplying a second gas to the reaction chamber;
- and
- applying a power to the reaction chamber,
- wherein the power has a frequency that is variable,
- wherein the second gas is activated by the power, and
- wherein the activated second gas reacts with the first gas to form a film on the patterned substrate.
A method of patterning a substrate, the method comprising;
- providing a substrate to a reaction chamber;
- forming a first film on the substrate;
- forming a second film on the first film;
- patterning the second film;
- forming a third film on the second film;
- removing the third film selectively;
- removing the second film;
- removing the first film selectively;
- and
- removing the third film, wherein the first film comprises a carbon-containing material, the second film comprises a silicon-containing material, and the third film comprises a titanium-containing material.
Dependencies are inferred from the claim text.