Sputtering apparatus and method for thin film electrode deposition

A sputtering method comprising:

• providing a substrate, on which an organic layer is deposited, in a chamber;
• injecting plasma generation gas into the chamber;
• generating plasma by applying a voltage to a first cylindrical target and a second cylindrical target disposed in the chamber and arranged in a first direction in parallel to each other;
• and
• forming a thin film electrode on the substrate by stacking particles of the first and second cylindrical targets on the organic layer,
• wherein a first angle formed by a first imaginary straight line from a center of a first magnet in the first cylindrical target to a cylindrical axis of the first cylindrical target with a first perpendicular line is in a range of about 30 degrees to about 180 degrees, wherein the first perpendicular line is defined by an imaginary perpendicular line drawn from the cylindrical axis of the first cylindrical target to an upper surface of a substrate holder, and
• a second angle formed by a second imaginary straight line from a center of a second magnet in the second cylindrical target to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees, wherein the second perpendicular line is defined by an imaginary perpendicular line drawn from the cylindrical axis of the second cylindrical target to the upper surface of the substrate holder.