Semiconductor process apparatus

A semiconductor process apparatus comprising:

• a mask stage configured to seat a mask;
• a substrate stage configured to seat a substrate;
• a light generator configured to output extreme ultraviolet light (EUV) having an extreme ultraviolet EUV wavelength band to the mask;
• and
• an optical light receiver including a plurality of mirrors configured to reflect the EUV light reflected from the mask and enable the EUV light to be incident to the substrate, at least one of the plurality of mirrors including a mirror body and a reflective layer attached to a surface of the mirror body,
• wherein the reflective layer includes a plurality of silicon layers, a plurality of molybdenum layers alternately stacked with the plurality of silicon layers, and at least one graphene layer.

A semiconductor process apparatus comprising:

• a light generator configured to output extreme ultraviolet (EUV) light;
• a mask stage configured to seat a mask, the mask being configured to reflect the EUV light output from the light generator;
• a substrate stage configured to seat a substrate, the substrate being configured to receive the EUV light reflected from the mask;
• and
• an optical light receiver disposed between the mask stage and the substrate stage and including a plurality of mirrors reflecting the EUV light reflected from the mask,
• wherein at least one of the plurality of mirrors includes a mirror body and a reflective layer attached to a surface of the mirror body,
• wherein the reflective layer includes a plurality of first layers, a plurality of second layers, and at least one third layer,
• wherein the plurality of first layers has a first material, the plurality of second layers having a second material, and the third layer has a third material,
• wherein the first material, the second material, and the third material are different from each other,
• wherein the plurality of first layers and the plurality of second layers are alternately stacked, and
• wherein a thickness of the third layer is less than a thickness of each of the plurality of first layers and the plurality of second layers.