Optical proximity correction methods and mask manufacturing methods including the optical proximity correction methods

A mask manufacturing method comprising:

• obtaining a first optical proximity corrected (OPCed) design layout by implementing a first optical proximity correction (OPC) on an OPC target design layout;
• performing a reverse dissection on the OPC target design layout based on the first OPCed design layout to generate first segments;
• performing a reverse correction to allocate first biases of the first OPCed design layout to the first segments of the OPC target design layout;
• performing a segment grouping by grouping the first segments that have identical surroundings into first groups;
• determining a patch representative bias for the first groups of each patch;
• determining a full-chip representative bias for the first groups in an entire chip area;
• applying the full-chip representative bias to the entire chip area to generate a finally OPCed design layout;
• preparing mask data based on the finally OPCed design layout;
• and
• exposing a mask substrate based on the mask data.

A mask manufacturing method comprising:

• obtaining a first optical proximity corrected (OPCed) design layout by implementing a first optical proximity correction (OPC) on an OPC target design layout;
• performing a reverse dissection on the OPC target design layout based on the first OPCed design layout to generate first segments;
• performing a reverse correction to allocate first biases of the first OPCed design layout to the first segments of the OPC target design layout;
• determining a full-chip representative bias based on a segment grouping of the first segments;
• applying the full-chip representative bias to an entire chip area to obtain a finally OPCed design layout;
• preparing data on the finally OPCed design layout as mask tape-out (MTO) design data;
• preparing mask data based on the MTO design data;
• and
• exposing a mask substrate based on the mask data.