Silicon photonics structure and manufacturing method thereof

A manufacturing method of a silicon photonics structure, comprising:

• providing a silicon photonics device layer, wherein the silicon photonics device layer comprises:
• a substrate layer having a first side and a second side opposite to each other;
• and
• a waveguide located on the first side of the substrate layer;
• forming a first patterned photoresist layer on the first side;
• performing a first etching process on the first side by using the first patterned photoresist layer as a mask to form a first opening in the substrate layer;
• removing the first patterned photoresist layer;
• forming a second patterned photoresist layer on the second side;
• performing a second etching process on the second side by using the second patterned photoresist layer as a mask to form a second opening in the substrate layer;
• removing the second patterned photoresist layer;
• and
• performing a cutting process on the substrate layer exposed by the second opening by using a cutter to form a third opening in the substrate layer and to form a silicon photonics device, wherein the third opening is connected to the first opening to cut the substrate layer into a substrate, and the silicon photonics device comprises:
• the substrate having the first side and the second side and comprising a staircase structure;
• and
• the waveguide located on the first side of the substrate.