Silicon Carbide Crystal Growth Device and Quality Control Method

A silicon carbide crystal growth device, comprising:

• an annealing unit, for performing a high-temperature purification process on a plurality of target objects;
• a crystal growth unit, used to carry out a crystal growth process on a container contained in the target objects, a silicon carbide seed crystal and a silicon carbide powder placed in a graphite crucible inside of the container;
• an atmosphere control unit, connected to the annealing unit and the crystal growth unit, and providing a gas environment with low water, oxygen, and nitrogen;
• wherein the target objects after the high-temperature purification process through the annealing unit are transported to the atmosphere control unit, and after assembling the target objects in the atmosphere control unit, the target objects are transported to the crystal growth unit to carry out the crystal growth process;
• and
• a first weighing system, disposed on a first plate of the crystal growth unit for supporting the container, to detect a weight change of the container during the crystal growth process;
• wherein the first weighing system comprises at least two first weight sensors distributed along a periphery of the first plate, and the first weight sensors are electrically connected to a processing unit.