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US 2025/0026642 A1Published application
Silicon carbide devices and methods of making and using the same
AssigneeThe University of North Carolina at Charlotte
InventorAhmed EI-Ghannam
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Abstract
The present invention relates to silicon carbide (SiC) devices having a surface that has been activated to enhance properties including strength, porosity, and bioactivity. Activation may include forming silica gel with or without silicon nitride on the surface. The invention further relates to methods of making the devices and using the devices.
Claims30
A method of making a silicon carbide (SiC) device, comprising:
- (i) preparing a SiC device;
- (ii) thermally treating the SiC device at about 500-900° C.;
- (iii) exposing the SiC device to NaOH to form a silica gel layer on the surface of the SiC device;
- (iv) thermally treating the SiC device after exposing at about 550-1300° C.;
- (v) exposing the SiC device to nitrogen to form silicon nitride on the SiC device surface;
- and
- (vi) thermally treating the SiC device during or after exposing to nitrogen at about 900-1300° C.
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A method of increasing strength of a SiC device, comprising:
- (i) exposing SiC particles to NaOH to create a silica gel layer;
- (ii) drying the SiC particles in air to dry the silica-gel layer;
- (iii) mixing the SiC particles with aluminium oxide and/or magnesium oxide and/or silicate mineral particles such as mullite, cordierite, cristobalite, or spodumene;
- (iv) preparing a SiC device using the mixture of step (iii) using a 3D printer or by pressing in a mold;
- and
- (v) thermally treating the SiC device at about 800-1400° C. for 4-24 hours.
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Dependencies are inferred from the claim text.