Improvements in chemical vapor deposition systems
AssigneeCVD Equipment Corporation
InventorsWilliam S. Linss, John B. Feraca
Life of this patent
Estimating the term…
Abstract
Chemical Vapor Deposition (CVD) systems with DC, RF, IF (intermediate frequency) and/or microwave plasma have processing chambers incorporate structure to provide improved temperature control, uniform distribution of the process gas, and plasma distribution between the positive electrode and grounded wafer. The temperature of a rotating wafer chuck during a chemical vapor deposition process may be controlled by a programmable logic controller that includes algorithms for controlling a temperature of the rotating wafer chuck.
Claims23
A temperature control apparatus, the apparatus comprising;
- a rotating wafer chuck including:
- at least one rotationally divided heat zone in communication with a heating element, the at least one rotationally divided heat zone located adjacent a first portion of a wafer supported on the rotating wafer chuck;
- and
- at least one rotationally divided cool zone in communication with a cooling element, the at least one rotationally divided cool zone located adjacent a second, different portion of the wafer supported on the rotating wafer chuck.
(canceled)
(canceled)
A system for controlling a temperature during chemical vapor deposition, the system comprising:
- a rotating wafer chuck;
- a cooling element;
- a heating element;
- and
- a programmable logic controller, wherein:
- the rotating wafer chuck includes at least one rotationally divided heat zone in communication with the heating element, the at least one rotationally divided heat zone located adjacent a first portion of a wafer supported on the rotating wafer chuck, and at least one rotationally divided cool zone in communication with the cooling element, the at least one rotationally divided cool zone located adjacent a second, different portion of the wafer supported on the rotating wafer chuck,
- the programmable logic controller is in communication with the cooling element, the heating element, and the rotating wafer chuck, and
- the programmable logic controller includes a processor and a memory storing instructions which, when executed by the processor, control a temperature of the rotating wafer chuck utilizing at least one of the heating element or the cooling element.
A method of stabilizing the temperature of a rotating wafer chuck of a chemical vapor deposition system during chemical vapor deposition, the method comprising:
- rotating a substrate to be coated in a rotating wafer chuck,
- measuring the temperature of the substrate in two or more different rotationally divided zones of the rotating wafer chuck;
- and
- adjusting the temperature of the rotating wafer chuck by automatically activating a heating element located adjacent a first portion of the substrate, a cooling element located adjacent a second, different portion of the substrate, or both.
(canceled)
Dependencies are inferred from the claim text.