Film quality improver, method of forming thin film using film quality improver, semiconductor substrate fabricated using method, and semiconductor device including semiconductor substrate

Abstract

The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. The present invention provides a compound having a predetermined structure as a film quality improver. According to the present invention, by forming a shielding area for a molybdenum-based thin film on a substrate, the deposition rate of a molybdenum-based thin film may be reduced, and the growth rate of a thin film may be controlled. Thus, even when forming a thin film using a solid compound on the substrate with a complicated structure at room temperature, step coverage and the thickness uniformity of the thin film may be greatly improved, and corrosion or deterioration may be prevented, thereby improving the crystallinity and electrical properties of a thin film.

Dependencies are inferred from the claim text.