Film-forming method and film-forming apparatus
AssigneeTokyo Electron Limited
InventorsShimon OTSUKI, Masahiko KAMINISHI, Fumiaki HAYASE
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Abstract
A film-forming method is provided for forming a thin film on a substrate. The film-forming method includes (a) adsorbing a raw material gas onto the substrate, (b) supplying an oxidizing gas to the substrate to oxidize the raw material gas, (c) exposing the substrate to a plasma formed using a plasma gas including an argon gas and an oxygen gas, where (c) includes adjusting an output of the plasma to control crystallinity of the thin film formed on the substrate, and (d) repeating (a), (b), and (c) in this order.
Claims7
A film-forming method for forming a thin film on a substrate, the film-forming method comprising:
- (a) adsorbing a raw material gas onto the substrate;
- (b) supplying an oxidizing gas to the substrate to oxidize the raw material gas;
- (c) exposing the substrate to a plasma formed using a plasma gas including an argon gas and an oxygen gas, where (c) includes adjusting an output of the plasma to control crystallinity of the thin film formed on the substrate;
- and
- (d) repeating (a), (b), and (c) in this order.
A film-forming apparatus that forms a thin film on a substrate, the film-forming apparatus comprising:
- a vacuum chamber configured to accommodate the substrate;
- a gas supply configured to supply a raw material gas, an oxidizing gas, and a plasma gas including an argon gas and an oxygen gas into the vacuum chamber;
- a plasma unit configured to form a plasma using the plasma gas;
- and
- a controller configured to control the gas supply and the plasma unit to perform
- (a) adsorbing the raw material gas onto the substrate,
- (b) supplying the oxidizing gas to the substrate to oxidize the raw material gas,
- (c) exposing the substrate to a plasma formed using the plasma gas, and
- (d) repeating (a), (b), and (c) in this order.
Dependencies are inferred from the claim text.