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US 2025/0019590 A1Published application
Nitride etchant composition and method
AssigneeEntegris, Inc.
InventorsEric Hong, SeongJin Hong, WonLae Kim, JeongYeol Yang, SeungHyun Chae, JuHee Yeo
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Abstract
Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.
Claims20
A composition comprising:
- water;
- at least one oxidizing agent;
- at least one fluoride containing etchant;
- at least one metal corrosion inhibitor;
- at least one pH adjustor;
- and optionally
- at least one water-miscible solvent,
- wherein the composition has a titanium nitride etch rate of greater than about 3.5 angstroms per minute, the composition has a molybdenum etch rate of less than about 2 angstroms per minute, and the composition comprises a selectivity ratio of titanium nitride etching to molybdenum etching of about 5 to 25, when measured at 45° C. for 5 minutes.
5 more elements
A composition consisting of:
- a. water;
- b. at least one oxidizing agent;
- c. at least one fluoride containing etchant;
- d. at least one corrosion inhibitor, wherein the at least one corrosion inhibitor comprises 5-methyl benzotriazole;
- e. at least one pH adjustor;
- and optionally
- f. at least one water-miscible solvent.
4 more elements
A composition comprising:
- a. water;
- b. at least one oxidizing agent;
- c. at least one fluoride containing etchant;
- and
- d. at least one metal corrosion inhibitor, wherein the at least one metal corrosion inhibitor comprises 4-(3-phenylpropyl) pyridine and 5-methyl benzotriazole.
2 more elements
Dependencies are inferred from the claim text.