Polishing pad, preparation method thereof and method for preparing semiconductor device using same

A process for preparing a polishing pad, which comprises:

• mixing a urethane-based prepolymer, a curing agent, and a foaming agent to prepare a raw material mixture;
• and
• injecting the raw material mixture into a mold and curing it to form a polishing pad,
• wherein the polishing pad satisfies the following Relationships 1 and 2 in the areal material ratio curve based on the ISO 25178-2 standard after 25 dummy wafers are polished for 60 seconds each and two monitoring wafers are polished for 60 seconds each, each of the wafers being a silicon oxide wafer (or PETEOS wafer), while a calcined ceria slurry is sprayed at a rate of 200 cc/min on to the polishing pad, and when the polishing pad after the polishing is measured with an optical surface roughness meter:
• 0.02
• ≤
• Vmp
• ⁡
• (
• 10
• )
• /
• Vvv
• ⁡
• (
• 80
• )
• ≤
• 1.
• [
• Relationship
• ⁢
• 1
• ]
• 0.005
• ≤
• Vmp
• ⁡
• (
• 10
• )
• /
• Vmc
• ⁡
• (
• 10
• ,
• 8
• ⁢
• 0
• )
• ≤
• 2
• .
• 0
• ⁢
• 0
• ⁢
• 0
• [
• Relationship
• ⁢
• 2
• ]
• in Relationships 1 and 2,
• Vmp(10) is the material volume of the peaks corresponding to the upper 10%,
• Vvv(80) is the void volume of the valleys corresponding to the upper 80% to 100%, and
• Vmc(10,80) is the material volume of the core corresponding to the upper 10% to 80%.