Etching composition, metal-containing film etching method using the same, and semiconductor device manufacturing method using the same

Abstract

Provided are an etching composition, a method of etching a metal-containing film using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition includes an oxidizing agent, an acid, and a selective etching inhibitor, wherein the oxidizing agent is metal-free, the selective etching inhibitor includes a copolymer including a first repeating unit and a second repeating unit, the first repeating unit is different from the second repeating unit, and the first repeating unit is a nitrogen-containing repeating unit.

Dependencies are inferred from the claim text.