Semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising:

• a first step of preparing a semiconductor substrate having a groove portion formed on one principal surface;
• a second step of forming a first metal layer on the one principal surface of the semiconductor substrate to form a plurality of fuse wirings made of the first metal layer in the groove portion and forming a metal wiring made of the first metal layer on the one principal surface at a position separated from the groove portion of the one principal surface;
• a third step of forming a first insulating film so as to cover the one principal surface and have a first opening that exposes the plurality of fuse wirings and a second opening that exposes the metal wiring;
• a fourth step of forming a polymeric insulating film in the first opening so as to bury the plurality of fuse wirings in the groove portion;
• a fifth step of forming a second metal portion by forming a second metal layer so as to extend covering a first metal portion covering the polymeric insulating film, a surface of the metal wiring exposed in the second opening, and a surface of the first insulating film at a peripheral edge of the second opening;
• a sixth step of forming a second insulating film that buries the first metal portion on an upper surface of the polymeric insulating film and covers the second metal portion so as to partially expose an upper surface of the second metal portion;
• and
• a seventh step of forming a third metal portion by forming a third metal layer, the third metal portion ranging from an upper surface of the second metal portion exposed from the second insulating film to an upper surface of the second insulating film.