Kink-free high fill-factor broad area semiconductor laser on an off-cut substrate

An optical device, comprising:

• an off-cut substrate having a cut angle of at least approximately 6 degrees (°);
• and
• an epitaxial structure over the off-cut substrate;
• wherein a first sidewall of the optical device is parallel to a second sidewall of the optical device,
• wherein a front facet of the optical device is parallel to a back facet of the optical device,
• wherein the front facet and the back facet are perpendicular to epitaxial layers of the epitaxial structure, and
• wherein the first sidewall and the second sidewall are non-perpendicular to the epitaxial layers of the epitaxial structure.

A laser device, comprising:

• a substrate having a cut angle that is greater than or equal to approximately 6 degrees (°);
• and
• an epitaxial structure over the substrate, the epitaxial structure comprising a plurality of epitaxial layers;
• wherein sidewalls of the laser device are parallel to each other,
• wherein the sidewalls are non-perpendicular to the plurality of epitaxial layers,
• wherein facets of the laser device are parallel to each other, and
• wherein the facets of the laser device are perpendicular to the plurality of epitaxial layers.