Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures

2:

• The method of claim 1 wherein the forming of the liner comprises the forming is performed under conditions that allow the liner to be selectively formed within the distal regions relative to the proximal regions.

3:

• The method of claim 2 wherein the conditions for forming the liner comprises utilizing atomic layer deposition with tuned pulses.

4:

• The method of claim 1 wherein the forming of the liner comprises etching the liner in the proximal regions.

5:

• The method of claim 1 wherein the forming of the liner comprises providing dopant in the liner located in the proximal regions.

8:

• The method of claim 7 further comprising providing conductive material along the distal and proximal regions of the void levels wherein the difference in compositions of material in the liner of seed material enhances the growth of the conductive material along the distal regions relative to the proximal regions.

9:

• The method of claim 7 further comprising providing conductive material along the distal and proximal regions of the void levels wherein the difference in compositions of material in the liner of seed material inhibits the growth of the conductive material along the proximal regions relative to the distal regions.

10:

• The method of claim 7 wherein the liner of seed material is not conductive.

11:

• The method of claim 7 wherein the difference in compositions of material in the liner of seed material comprises a first metal-containing material different from a second metal-containing material.

12:

• The method of claim 7 wherein the compositions of material in the liner of seed material comprises one or more of cobalt, carbon and germanium.

13:

• The method of claim 7 wherein the difference in compositions of material in the liner of seed material exists only in a surface of the liner of seed material.

14:

• The method of claim 7 wherein the difference in compositions of material in the liner of seed material comprises a difference in concentration of nitrogen.

15:

• The method of claim 14 wherein the difference in in concentration of nitrogen comprises a higher concentration of nitrogen in the proximal regions relative to the distal regions.

17:

• The method of claim 16 wherein the doping is not performed in the liner of seed material in the distal regions of the void levels.

18:

• The method of claim 16 wherein the doping is performed additional in the liner of seed material in the distal regions of the void levels.

19:

• The method of claim 16 wherein the doping comprises conditions in which the dopant migrates primarily in the liner of seed material in the proximal regions of the void levels and not the distal regions of the void levels.

20:

• The method of claim 16 wherein the doping comprises utilizing nitrogen as the dopant.