One-time-programmable memory devices and methods for forming the same

A memory device, comprising:

• a memory cell comprising:
• a transistor;
• and
• a plurality of pairs of resistors coupled to the transistor in series, each of the pairs of resistors including a first resistor and a second resistor;
• wherein the transistor is formed along a major surface of a substrate;
• wherein at least a first one of the pairs of resistors are formed in a first one of a plurality of metallization layers disposed above the transistor;
• and
• wherein at least a second one of the pairs of resistors are formed in a second one of the plurality of metallization layers, the second one of the plurality of metallization layers being disposed above the first one of the plurality of metallization layers.

A method for fabricating a memory device, comprising:

• forming a transistor along a major surface of a substrate;
• forming a first metallization layer above the transistor, wherein the first metallization layer includes a plurality of first conductive lines laterally separated from one another with a first dielectric material;
• and
• forming a first via structure having a lower portion laterally interposed between an adjacent pair of the first conductive lines.