US 2024/0407154 A1 · DIGIT LINE / CELL PLATE ISOLATION

Abstract

A variety of applications can include an apparatus having a memory device including digit lines isolated from each other by filling an area directly under the digit line with a dielectric material. The dielectric material can be any insulating material such as oxides or nitrides. The provision of the area directly under each digit line can be accomplished without etching out an entire layer of epitaxially grown regions for the memory cells vertically stacked in a three-dimensional array. In a three-dimensional DRAM, metal plates for capacitors can be isolated in a manner similar to the isolation of digit lines. Such processing can be scalable, which may allow for a three-dimensional DRAM to have hundreds memory cell tiers.

Claims20

Dependent claims

A method of forming a memory device, the method comprising:

forming a liner in a trench between formed memory cells, the liner formed on a bottom of the trench and along sidewalls of the trench;
forming an insulator material on the liner, filling the trench;
removing the insulator material to a level below a top surface of the memory cells, leaving a portion of the insulator material on the liner at the bottom of the trench and forming an opening that exposes the liner on the sidewalls;
removing the liner from the sidewalls;
and
forming conductive material for a digit line on the portion of the insulator material and along the sidewalls.

3 more elements

Dependencies are inferred from the claim text.

Digit line / cell plate isolation

Life of this patent

Digit line / cell plate isolation

Life of this patent

Abstract

Claims20