Bidirectional semiconductor switch with passive discharge circuit
AssigneeInfineon Technologies Austria AG
InventorsKennith Kin Leong, Gerhard Maderbacher, Herwig Wappis
Life of this patent
Estimating the term…
Loading patent…
AssigneeInfineon Technologies Austria AG
InventorsKennith Kin Leong, Gerhard Maderbacher, Herwig Wappis
Estimating the term…
A semiconductor device includes: a semiconductor body having an active region and a substrate region beneath the active region; a bidirectional switch having first and second gate structures configured to control a conductive state of a channel in the active region, and first and second input-output terminals electrically connected to the channel; and a passive discharge circuit in parallel with the bidirectional switch and configured to utilize a fraction of a voltage across the first and second input-output terminals to switch on a transistor device that electrically connects the substrate region to the input-output terminal at the lower potential during an off-state of the bidirectional switch and during ZVS (zero-voltage switching) transition periods.
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.