Near infrared phosphor and light emitting device

A light emitting device comprising:

• a light emitting diode chip configured to emit light having a peak wavelength of 400 nm to 470 nm;
• a red wavelength conversion material converting a portion of the light into red light having a peak wavelength of 620 nm to 670 nm;
• and
• a near-infrared phosphor configured to convert a portion of the light into near-infrared light having a peak wavelength of 740 nm to 820 nm,
• wherein the near-infrared phosphor comprises a phosphor represented by composition formula CaAl(12-x-y)GayO19:xCr3+, where x satisfies 0.1≤x≤0.3 and y satisfies 1 or more, and
• an emission spectrum of the near-infrared light has a ratio of an intensity of 690 nm relative to an intensity of 780 nm of 0.3 or less, and has a full-width-half-maximum (FWHM) of 90 nm to 110 nm,
• wherein an emission spectrum of final light of the light emitting device covers 60% or more of an ATP action spectrum.