Alternating electric field-driven gallium nitride (gan)-based nano-light-emitting diode (nanoled) structure with electric field enhancement effect

Abstract

An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

Dependencies are inferred from the claim text.