AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing an AlGaN/GaN power high electron mobility transistor (HEMT) device, comprising the steps of:

• providing an n-type GaN substrate;
• sequentially forming a first p-type GaN layer, an AlGaN layer, and a hole-injection type PN junction layer from bottom to top above the n-type GaN substrate;
• forming a gate structure passing through the hole-injection type PN junction layer, the AlGaN layer, and the first p-type GaN layer, and stopped in the n-type GaN substrate, the gate structure comprising a gate metal aluminum layer and a gate silicon dioxide layer formed on sidewalls of and below the gate metal aluminum layer, the hole-injection type PN junction layer comprising a second p-type GaN layer and a second n-type GaN layer distributed in a horizontal direction, the second n-type GaN layer being located at a side close to the gate structure.