Semiconductor device comprising a high-k gate dielectric multilayer laminate structure and a method for manufacturing thereof

A semiconductor device comprising a silicon carbide (SiC) body, comprising:

• a drift region of a first conductivity type;
• a body region of a second conductivity type;
• a source region of the first conductivity type;
• and
• a gate structure comprising a gate electrode and a gate dielectric that isolates the gate electrode from the SiC body,
• wherein:
• the gate structure is disposed adjacent to at least one of the source region, the body region or the drift region;
• the gate dielectric comprises a multilayer laminate structure comprising a first layer of a first dielectric material comprising silicon oxide and a second layer of a second dielectric material;
• and
• the gate dielectric comprises layers of the first dielectric material as the first and the last layers of the multilayer laminate structure.