Vertically-stacked rgb micro-light-emitting diode having corner mesa contact structures and manufacturing method thereof

A method of manufacturing a micro-light-emitting diode, comprising the steps of:

• forming a first contact hole to form a first corner mesa contact structure on a vertically-stacked structure;
• forming a second contact hole to form a second corner mesa contact structure in a first direction with respect to the first contact hole;
• forming a third contact hole to form a third corner mesa contact structure in a second direction with respect to the second contact hole;
• forming a vertically-stacked structure including the corner mesa contact structures by etching the vertically-stacked structure, which includes the first contact hole at a first corner, the second contact hole at a second corner, the third contact hole at a third corner, and no contact hole at a fourth corner, into a rectangular pixel mesa structure, down to the surface of the first n-type semiconductor layer.
• depositing a passivation layer on the surface of the vertically-stacked structure including the corner mesa contact structures;
• etching the passivation layer for electrical connection of the light-emitting structures on the vertically-stacked structure;
• forming a metal contact to connect to the top of the vertically-stacked structure of the etched corner mesa contact structures;
• and
• dividing the metal contact formed on the vertically-stacked structure into four parts and etching the metal contacts.

A method of manufacturing a micro-light-emitting diode, comprising the steps of:

• forming a vertically-stacked structure including a pixel mesa structure by etching the vertically-stacked structure down to the top of a first n-type semiconductor layer;
• depositing a protective layer on the first n-type semiconductor layer of the vertically-stacked structure including the pixel mesa structure;
• removing a portion of the protective layer by performing chemical mechanical polishing (CMP) down to the surface of a third p-type semiconductor layer to planarize the protective layer and the pixel mesa structure;
• forming a first contact hole to form a first corner mesa contact structure at a first corner of the pixel mesa structure;
• forming a second contact hole to form a second corner mesa contact structure at a second corner of the pixel mesa structure in a first direction with respect to the first contact hole;
• forming a third contact hole to form a third corner mesa contact structure at a third corner of the pixel mesa structure in a second direction with respect to the second contact hole;
• forming a vertically-stacked structure including the corner mesa contact structures by removing the remaining protective layer on the pixel mesa structure;
• depositing a passivation layer on the surface of the vertically-stacked structure including the corner mesa contact structures;
• etching the passivation layer for electrode connection of the corner mesa contact structures;
• forming a metal contact to connect to the top of the vertically-stacked structure including the etched corner mesa contact structures;
• and
• dividing the metal contact formed on the vertically-stacked structure into four parts and etching the metal contacts.