Thin film transistor and transistor array substrate
AssigneeSamsung Display Co., Ltd.
InventorsEok Su KIM, So Young KOO, Hyung Jun KIM
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AssigneeSamsung Display Co., Ltd.
InventorsEok Su KIM, So Young KOO, Hyung Jun KIM
Estimating the term…
There is provided a thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate and including a channel area, a first conductive area connected to one side of the channel area, and a second conductive area connected to the other side of the channel area; a gate insulating layer covering areas other than the first conductive area and the second conductive area in the semiconductor layer; a gate electrode disposed on the gate insulating layer and overlapping the channel area in a plan view; and a first electrode disposed on the gate insulating layer on the one side of the channel area and in contact with a portion of the first conductive area. A first edge of the first electrode facing the gate electrode obliquely intersects a first edge of the gate insulating layer in a plan view.
A thin film transistor comprising:
A transistor array substrate comprising:
Dependencies are inferred from the claim text.