Semiconductor device and semiconductor module

A semiconductor device comprising:

• a first semiconductor element including a first electrode, a second electrode and a first gate electrode both located on an opposite side to the first electrode in a first direction;
• a second semiconductor element including a third electrode located on a same side as the first electrode with respect to the first semiconductor element in the first direction, a fourth electrode and a second gate electrode located on an opposite side to the third electrode in the first direction, the second semiconductor element being spaced apart from the first semiconductor element in a second direction perpendicular to the first direction;
• a sealing resin covering at least a part of each of the first semiconductor element and the second semiconductor element;
• a first signal terminal exposed externally from the sealing resin;
• and
• a first signal wiring electrically connecting the first and the second gate electrodes to the first signal terminal,
• wherein as viewed in the first direction, the first gate electrode has a first center,
• as viewed in the first direction, the second gate electrode has a second center,
• as viewed in the first direction, the first signal terminal has a third center,
• a first straight line connecting the first center and the third center has a length of L1,
• a second straight line connecting the second center and the third center has a length of L2,
• a first path from the first center to the third center via the first signal wiring has a length of R1,
• a second path from the second center to the third center via the first signal wiring has a length of R2,
• R2/R1 is closer to 1 than is L2/L1.