Semiconductor device and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hsuan YEN, Jen-Yuan CHANG
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Abstract
A semiconductor device is provided. The semiconductor device includes one or more conductive structures and a protective ring. The protective ring includes a first portion and a second portion at a higher elevation than the first portion. The one or more conductive structures are laterally surrounded by the first portion of the protective ring. The one or more conductive structures are laterally surrounded by the second portion of the protective ring. In one or more first regions of the protective ring, the first portion of the protective ring is not vertically coincident with the second portion of the protective ring.
Claims20
A semiconductor device, comprising:
- one or more dielectric layers;
- one or more conductive structures in the one or more dielectric layers;
- and
- a protective ring, provided within the one or more dielectric layers, comprising:
- a first portion comprising at least one of:
- one or more first vias;
- or
- one or more first metal layers;
- and
- a second portion, at a higher elevation than the first portion, comprising at least one of:
- one or more second vias;
- or
- one or more second metal layers,
- wherein:
- the one or more conductive structures are laterally surrounded by the first portion of the protective ring;
- the one or more conductive structures are laterally surrounded by the second portion of the protective ring;
- and
- in one or more first regions of the protective ring, the first portion of the protective ring is not vertically coincident with the second portion of the protective ring.
A semiconductor device, comprising:
- one or more conductive structures;
- and
- a protective ring comprising:
- a first portion;
- and
- a second portion at a higher elevation than the first portion,
- wherein:
- the one or more conductive structures are laterally surrounded by the first portion of the protective ring;
- the one or more conductive structures are laterally surrounded by the second portion of the protective ring;
- and
- in one or more first regions of the protective ring, the first portion of the protective ring is not vertically coincident with the second portion of the protective ring.
A method for forming a semiconductor device, comprising:
- forming a first portion of a protective ring, wherein the first portion of the protective ring laterally surrounds a first area;
- forming a second portion of the protective ring over the first portion of the protective ring, wherein:
- the second portion of the protective ring laterally surrounds the first area;
- in one or more first regions, a first section of the second portion of the protective ring is vertically coincident with the first portion of the protective ring;
- and
- in the one or more first regions, a second section of the second portion of the protective ring is not vertically coincident with the first portion of the protective ring;
- and
- forming a third portion of the protective ring over the second portion of the protective ring, wherein:
- the third portion of the protective ring laterally surrounds the first area;
- in the one or more first regions, the second section of the second portion of the protective ring is vertically coincident with the third portion of the protective ring;
- in the one or more first regions, the first section of the second portion of the protective ring is not vertically coincident with the third portion of the protective ring;
- and
- the one or more first regions comprise at least some of the first portion of the protective ring, at least some of the second portion of the protective ring, and at least some of the third portion of the protective ring.
Dependencies are inferred from the claim text.