Semiconductor device and method for manufacturing same

A semiconductor device, comprising:

• a lower interconnect layer including a first lower interconnect and a second lower interconnect;
• an upper interconnect provided above the lower interconnect layer in a first direction;
• a stacked body provided between the lower interconnect layer and the upper interconnect, the stacked body including a plurality of electrode layers and a plurality of insulating layers that are alternately stacked in the first direction;
• a first conductive layer provided between the first lower interconnect and the stacked body in the first direction;
• a second conductive layer adjacent to the first conductive layer in a second direction crossing the first direction and provided between the second lower interconnect and the stacked body in the first direction;
• a metal via piercing the stacked body in the first direction and electrically connected to the upper interconnect and the first lower interconnect, the metal via being in contact with the first conductive layer;
• and
• a semiconductor body extending in the stacked body in the first direction, the semiconductor body being in contact with the second conductive layer.

A method for manufacturing a semiconductor device, comprising:

• forming a stacked body above a layer including a lower layer interconnect, the stacked body including a plurality of first layers and a plurality of second layers that are alternately stacked in a direction, the plurality of first layers including a first layer and the plurality of second layers including a second layer;
• forming a hole piercing the stacked body, the hole having a recess which an end surface of the first layer is more distal to a central axis of the hole in the direction than an end surface of the second layer to the central axis of the hole in a diametral direction;
• and
• forming a via inside the hole with an insulating film interposed, the via being metal.