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US 2024/0404910 A1Published application
Semiconductor Device and Manufacturing Method Therefor
AssigneeNippon Telegraph and Telephone Corporation
InventorsYusuke Araki, Hideaki Matsuzaki, Yuta Shiratori
Life of this patent
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Abstract
A first heat transport structure formed to penetrate a molding resin layer is connected to a first extending portion of a first heat transport layer and a first heat dissipation plate formed on the molding resin layer. A second heat transport structure formed to penetrate the molding resin layer is connected to a second extending portion of a second heat transport layer and a second heat dissipation plate formed on the molding resin layer.
Claims6
A semiconductor device comprising:
- a wiring layer in which wiring is formed;
- a semiconductor chip disposed on the wiring layer;
- an integrated circuit formed on a main surface of the semiconductor chip, the main surface facing a side of the wiring layer, and connected to the wiring;
- a heat transport layer formed on a surface of the semiconductor chip on which the integrated circuit is not formed, and further including a heat transporter including an extending portion extending on the wiring layer and formed on the semiconductor chip;
- a molding resin layer made of a molding resin for molding the semiconductor chip covered with the heat transport layer on the wiring layer;
- a heat dissipation plate formed on the molding resin layer;
- and
- a heat transport structure formed to penetrate the molding resin layer, and including a heat transporter that thermally connects the extending portion of the heat transport layer and the heat dissipation plate.
5 more elements
A method of manufacturing a semiconductor device comprising:
- a first step of fixing a semiconductor chip having an integrated circuit formed on a main surface onto a support substrate with the surface on which the integrated circuit is formed;
- a second step of forming a layer including a heat transporter on the support substrate to which the semiconductor chip is fixed;
- a third step of forming a layer including a heat transporter on the support substrate and then molding the semiconductor chip with a molding resin to form a molding resin layer;
- a fourth step of separating the support substrate and the molding resin layer;
- a fifth step of separating the support substrate and the molding resin layer, then removing a part of the layer formed to cover a back surface of the molding resin layer on a side where the integrated circuit is formed, and forming a heat transport layer including an extending portion formed on a surface of the semiconductor chip other than the surface on the side where the integrated circuit is formed and further extending on the back surface of the molding resin layer;
- a sixth step of forming a heat transport structure including a heat transporter thermally connected to the extending portion of the heat transport layer in a state of being molded in the molding resin layer;
- a seventh step of forming a state in which the semiconductor chip is disposed on a wiring layer including wiring, the integrated circuit is connected to the wiring, and the semiconductor chip is molded with the molding resin layer on the wiring layer;
- and
- an eighth step of forming a heat dissipation plate thermally connected to the heat transport structure on the molding resin layer.
6 more elements
Dependencies are inferred from the claim text.