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US 2024/0404878 A1Published application
Semiconductor devices and methods of manufacturing semiconductor devices
AssigneeAmkor Technology Portugal, S.A.
InventorEoin O'Toole
Life of this patent
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Abstract
An electronic device comprises a substrate and a semiconductor component coupled to the substrate. The substrate may include a dielectric layer, a seed layer, a conductive pattern, and an external interconnect first structure coupled to the conductive pattern. The dielectric layer may include photo-definable dielectric material. The conductive pattern and the external interconnect first structure may include one or more electroplated conductive layers formed using the same seed layer of the substrate.
Claims20
An electronic device, comprising
- a substrate comprising:
- a dielectric layer comprising a dielectric layer top side, a dielectric layer bottom side, a dielectric layer lateral side between the dielectric layer top side and the dielectric layer lateral side, and a dielectric layer aperture that pass through the dielectric layer from the dielectric layer top side to the dielectric layer bottom side;
- a seed layer on the dielectric layer bottom side, wherein the seed layer extends into the dielectric layer aperture toward the dielectric layer top side;
- a conductive pattern on the seed layer, wherein the conductive pattern extends into the dielectric layer aperture toward the dielectric layer top side;
- an external interconnect first structure comprising an external interconnect first structure top side coupled to the conductive pattern;
- and
- a substrate encapsulant that surrounds and contacts the dielectric layer lateral side, a lateral side of the conductive pattern, and a lateral side of the external interconnect first structure;
- and
- a semiconductor component comprising a component bottom side coupled to the dielectric layer top side and an interconnection structure electrically coupled to the conductive pattern via the seed layer.
6 more elements
A method comprising:
- providing a first dielectric layer over a front side of a semiconductor component;
- patterning the first dielectric layer to form a patterned first dielectric layer;
- forming a seed layer over the patterned first dielectric layer;
- electroplating a conductive pattern on the seed layer by applying current to the seed layer;
- and
- electroplating an external interconnect first structure on the conductive pattern by applying current to the seed layer.
3 more elements
Dependencies are inferred from the claim text.