US 2024/0404825 A1 · METHODS OF MAKING SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR PROCESSING SYSTEMS AND COMPUTER PROGRAM PRODUCTS FOR MAKING SEMICONDUCTOR STRUCTURES

Abstract

A method of making a semiconductor structure includes seating a substrate within a chamber arrangement, depositing a boron-doped silicon germanium layer onto the substrate, and depositing a boron-doped silicon layer onto the boron-doped silicon germanium layer. Deposition of the boron-doped silicon layer includes ceasing flow of a boron-containing precursor to the chamber arrangement; decreasing flow of a germanium-containing precursor to the chamber arrangement; increasing flow of a silicon-containing precursor to the chamber arrangement; ceasing, after increasing flow of the silicon-containing precursor, flow of the germanium-containing precursor to the chamber arrangement; and resuming flow of the boron-containing precursor to the chamber arrangement. Semiconductor structures as well as semiconductor processing systems and computer program products for making semiconductor structures are also described.

Claims20

Dependent claims

A method of making a semiconductor structure, comprising:

seating a substrate within a chamber arrangement;
depositing a boron-doped silicon germanium (SiGe:B) layer onto the substrate;
and
depositing a boron-doped silicon (Si:B) layer onto the SiGe:B layer;
wherein depositing the Si:B layer comprises:
ceasing flow of a boron-containing precursor to the chamber arrangement;
decreasing flow of a germanium-containing precursor to the chamber arrangement;
increasing flow of a silicon-containing precursor to the chamber arrangement;
ceasing, after increasing flow of the silicon-containing precursor, flow of the germanium-containing precursor to the chamber arrangement;
and
resuming flow of the boron-containing precursor to the chamber arrangement.

8 more elements

A semiconductor processing system, comprising:

a precursor delivery arrangement;
a chamber arrangement with a substrate support connected to the precursor delivery arrangement;
a controller operably connected to the precursor delivery arrangement and the chamber arrangement, the controller responsive to instructions recorded on a memory to:
seat a substrate within the chamber arrangement;
deposit a boron-doped silicon germanium (SiGe:B) layer overlaying the substrate;
deposit a boron-doped silicon (Si:B) layer overlaying the SiGe:B by:
ceasing a flow of a boron-containing precursor to the chamber arrangement;
decreasing a flow of a germanium-containing precursor to the chamber arrangement;
increasing a flow of a silicon-containing precursor to the chamber arrangement;
ceasing, after increasing the flow of the silicon-containing precursor, the flow of the germanium-containing precursor to the chamber arrangement;
and
resuming the flow of the boron-containing precursor to the chamber arrangement after ceasing the flow of the germanium-containing precursor to the chamber arrangement.

9 more elements

Dependencies are inferred from the claim text.

Methods of making semiconductor structures, semiconductor structures, and semiconductor processing systems and computer program products for making semiconductor structures

Life of this patent

Methods of making semiconductor structures, semiconductor structures, and semiconductor processing systems and computer program products for making semiconductor structures

Life of this patent

Abstract

Claims20