Electronic device including an input sensor

An electronic device, comprising:

• an active region and a peripheral region disposed on at least one side of the active region,
• wherein the peripheral region includes:
• a base layer;
• a circuit layer disposed on the base layer, the circuit layer including an inorganic film pattern having a groove defined in, a signal line disposed in the groove, and an organic film pattern covering an edge of the signal line and exposing a portion of a top surface of the inorganic film pattern;
• and
• an input sensor disposed on the circuit layer, the input sensor including a sensor conductive layer electrically connected to the signal line, a sensor base layer covering the organic film pattern and the exposed top surface of the inorganic film pattern, and a sensor insulating layer disposed on the sensor base layer, and
• wherein the sensor base layer includes a buffer insulating layer including silicon (Si) and oxygen (O), and an atomic percent of oxygen (O) within the buffer insulating layer is in a range of 2 at % to 67 at %.

An electronic device, comprising:

• a base layer;
• a circuit layer disposed on the base layer and including a transistor, a plurality of inorganic films, and a plurality of organic films;
• a display element layer disposed on the circuit layer;
• an encapsulation layer disposed on the display element layer;
• and
• an input sensor disposed on the encapsulation layer and including a sensor base layer, a sensor conductive layer disposed on the sensor base layer, and a sensor insulating layer disposed on the sensor base layer and including silicon nitride (SiNx),
• wherein the sensor base layer includes a buffer insulating layer including silicon (Si) and oxygen (O), and
• wherein the buffer insulating layer has a porosity that is higher than a porosity of the sensor insulating layer.