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US 2024/0402216 A1Published application
Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips
AssigneeUNM Rainforest Innovations
InventorsSteven R.J. BRUECK, Daniel FEEZELL, John RANDALL, Tito BUSANI, Joshua B. BALLARD, Mahmoud BEHZADIRAD, Ashwin Krishnan RISHINARAMANGALAM
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Abstract
Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
Claims20
A method of forming an array of composite nanoscale tips for use in scanning tunneling microscopy or lithography, comprising:
- preparing an array of tip precursors on a crystalline substrate;
- providing an area for selective area growth of a wide bandgap semiconducting material on each tip precursor;
- growing a single crystal wide bandgap semiconductor nanowire on each selective growth area;
- separating the array of scanning tunneling tip precursors into subarrays wherein each subarray contains at least one scanning tunneling tip;
- and
- mounting at least one of subarray of the array of scanning tunneling tip precursors for use in a scanning tunneling microscope.
3 more elements
A method of forming an array of composite tips for use in scanning tunneling microscopy, comprising:
- preparing an array of scanning tunneling microscope tip precursors on a crystalline substrate;
- providing an area for selective area growth of a wide bandgap semiconducting material on each tip precursor;
- growing a single crystal wide bandgap semiconductor nanowire on each selective growth area;
- separating the array of scanning tunneling tip precursors into subarrays;
- and
- mounting at least one of subarray of the array of scanning tunneling tip precursors onto an actuated piezoelectric tube.
3 more elements
Dependencies are inferred from the claim text.