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US 2024/0400895 A1Published application
Semiconductor nanoparticles, method for producing semiconductor nanoparticles, and light emitter
AssigneesNational University Corporation Tokai National Higher Education and Research System, Murata Manufacturing Co., Ltd.
InventorsTsukasa TORIMOTO, Tatsuya KAMEYAMA, Junya KUBO, Norikazu FUJIHIRA
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Abstract
Semiconductor nanoparticles that include a compound semiconductor mainly containing a Ag component, a Ge component, and a S component, wherein a content ratio of the Ag component to the Ge component is 1.0 or more and less than 7.5, in terms of molar ratio, and an average particle size of the semiconductor nanoparticles is 9 nm or less
Claims28
Semiconductor nanoparticles comprising:
- a compound semiconductor mainly containing a Ag component, a Ge component, and a S component,
- wherein a content ratio of the Ag component to the Ge component is 1.0 or more and less than 7.5 in terms of molar ratio, and
- an average particle size of the semiconductor nanoparticles is 9 nm or less.
A method for producing semiconductor nanoparticles, the method comprising:
- weighing a Ag compound, a Ge compound, and a S compound such that a content ratio of the Ag component to the Ge component in a compound semiconductor of the semiconductor nanoparticles to be produced is 1.0 or more and less than 7.5 in terms of molar ratio;
- dissolving the weighed compounds in a solvent so as to produce a Ag—Ge—S mixture solution;
- and
- heating the Ag—Ge—S mixture solution at a reaction temperature of 150° C. or higher and lower than 250° C. so as to synthesize the semiconductor nanoparticles having an average particle size of 9 nm or less.
1 more element
Dependencies are inferred from the claim text.