Method for transferring a monocrystalline sic layer onto a polycrystalline sic carrier using a poly crystalline sic intermediate layer

Abstract

A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline SiC carrier substrate includes: forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of which is made of single-crystal SiC; before or after forming the polycrystalline SiC layer, implanting ionic species into the surface portion of the donor substrate, so as to form a plane of weakness delimiting a thin single-crystal SiC layer to be transferred; after the implanting of the ionic species and the forming of the polycrystalline SiC layer, bonding the donor substrate and the polycrystalline SiC carrier substrate, the polycrystalline SiC layer being at the bonding interface; and detaching the donor substrate along the plane of weakness, so as to transfer the polycrystalline SiC layer and the thin single-crystal SiC layer onto the polycrystalline SiC carrier substrate.

Dependencies are inferred from the claim text.