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US 2024/0392441 A1Published application
Cvd reactor with a supporting ring, and supporting ring for a substrate
AssigneeAixtron SE
InventorsJared Lee HOLZWARTH, Marcel KOLLBERG, Merim MUKINOVIC, Stephan STRAUCH
Life of this patent
Estimating the term…
Abstract
A supporting ring is arranged in a CVD reactor and is part of a bearing arrangement which is intended for the mounting of a substrate. The bearing arrangement is arranged above a susceptor and is supplied with heat by the susceptor. The heat is transferred from the susceptor to a radially outer region or to a radially inner region of the supporting ring via an annular web of the supporting ring.
Claims21
A chemical vapor deposition (CVD) reactor for the deposition of an SiC layer on a substrate (10), the CVD reactor comprising:
- a housing (1);
- a susceptor arrangement (3) arranged within the housing (1);
- a heating device (6) for the heating of the susceptor arrangement (3);
- a process chamber ceiling (4);
- a process chamber (2) arranged between the process chamber ceiling (4) and the susceptor arrangement (3);
- and
- a gas inlet element (5) for the feeding of a process gas into the process chamber (2), wherein the susceptor arrangement (3) comprises:
- a bearing device for mounting a substrate (10) to be treated in the process chamber (2);
- a circular disc-shaped substrate holder (12) having a first upper face (32), and a first lower face (12′) located opposite to the first upper face (32);
- a peripheral wall (19) extending along a first cylindrical surface;
- a supporting ring (20) carried by a supporting flank (13) of the substrate holder (12), wherein the supporting ring (20) has a radially inner region (22) with a second lower face (22″) that rests on the supporting flank (13), and a second upper face located opposite the second lower face (22″) that forms a seating face (23) for seating an edge (10′) of the substrate (10), wherein the supporting ring (20) has a radially outer region (21) with a third upper face (26) and a third lower face (30′) located opposite the third upper face (26), the third lower face (30′) adjoining an outer wall (36) extending along a second cylindrical surface, and wherein the seating face (23) is bounded by a contact surface (24) with a first diameter (D1);
- and
- an annular web (33) with an inner wall (34) extending along a third cylindrical surface with a second diameter (D2), wherein the annular web (33) extends along the peripheral wall (19), wherein the first diameter (D1) is greater than the second diameter (D2) only by a magnitude of a diametric tolerance of the substrate (10), and wherein a height (d) of the annular web (33) measured between the second lower face (22″) of the radially inner region (22) and a lower edge (37) of the annular web (33) is less than a distance (b) between the supporting flank (13) and the first lower face (12′).
10 more elements
A supporting ring (20) for use in a chemical vapor deposition (CVD) reactor for depositing a SiC layer on a substrate (10), the supporting ring (20) comprising:
- a radially inner region (22) with a first lower face (22″) configured to rest on a supporting flank (13) of a substrate holder (12), and a first upper face that forms a seating face (23) located opposite the first lower face (22″), the seating face (23) being adjoined by a contact surface (24) with a first diameter (D1);
- a radially outer region (21) with a second upper face (26) and a second lower face (30′) that is located opposite the second upper face (26);
- and
- an annular web (33) with an outer wall (36) extending along a first cylindrical surface and an inner wall (34) located opposite the outer wall (36), wherein the second lower face (30′) adjoins the outer wall (36) of the annular web (33), wherein the inner wall (34) extends along a second cylindrical surface and adjoins the first lower face (22″) of the radially inner region (22), wherein the first lower face (22″) of the radially inner region (22) extends radially within the inner wall (34) of the annular web (33), and wherein the first diameter (D1) is only larger than a second diameter (D2) of the inner wall (34) by a magnitude of a diametric tolerance of the substrate (10).
1 more element
A bearing arrangement for mounting a substrate (10) in a chemical vapor deposition (CVD) reactor, the bearing arrangement comprising:
- a substrate holder (12) with a peripheral wall (19) extending along a first cylindrical surface, and with a supporting flank (13);
- and
- a supporting ring (20) supported by the supporting flank (13) of the substrate holder (12),
- wherein the supporting ring (20) comprises:
- a radially inner region (22) with a first lower face (22″) that rests on the supporting flank (13), and a first upper face located opposite the first lower face (22″), the first upper face forming a seating face (23) for seating of an edge (10′) of the substrate (10), wherein the seating face (23) is bounded by a contact surface (24) with a first diameter (D1);
- a radially outer region (21) with a second upper face (26) and a second lower face (30′) located opposite the second upper face (26);
- and
- an annular web (33) with an outer wall (36) extending along a second cylindrical surface and an inner wall (34) extending along a third cylindrical surface, the inner wall (34) having a second diameter (D2), wherein the first diameter (D1) is only larger than the second diameter (D2) by a magnitude of a diametric tolerance of the substrate (10).
5 more elements
(canceled)
Dependencies are inferred from the claim text.