Homoleptic Bismuth Precursors For Depositing Bismuth Oxide Containing Thin Films
AssigneeVersum Materials US, LLC
InventorsSergei V. Ivanov, Michael T. Savo, Jason P. Coyle
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Abstract
The disclosed and claimed subject matter relates to (i) homoleptic precursors of the formula Bi(Ar)3 where Ar is one or more a bulky alkyl group selected from an iso-propyl group, a sec-butyl group, an iso-butyl group, a neo-pentyl group, a sec-pentyl group and an iso-pentyl group and (ii) the use thereof as precursors for deposition of metal-containing films.
Claims20
A homoleptic precursor of the formula Bi(Ar)3 wherein Ar is one of a neo-pentyl group, a sec-pentyl group and an iso-pentyl group.
A method for forming a bismuth-containing film on at least one surface of a substrate comprising:
- a. providing the substrate with the at least one surface in a reaction vessel;
- b. forming a bismuth-containing film on the at least one surface by chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process using a homoleptic precursor of formula Bi(Ar)3 where Ar is a bulky alkyl group selected from an iso-propyl group, a sec-butyl group, an iso-butyl group, a neo-pentyl group, a sec-pentyl group and an iso-pentyl group.
A method for forming a bismuth-containing film on at least one surface of a substrate comprising:
- a. providing a substrate in a reaction vessel;
- b. introducing into the reaction vessel one or more precursor comprising a homoleptic precursor of formula Bi(Ar)3 where Ar is a bulky alkyl group selected from iso-propyl, sec-butyl, iso-butyl, neo-pentyl, sec-pentyl and iso-pentyl;
- c. purging the reaction vessel with a first purge gas;
- d. introducing into the reaction vessel a source gas;
- e. purging the reaction vessel with a second purge gas;
- f. sequentially repeating steps b through e until a desired thickness of the bismuth-containing film is obtained.
Dependencies are inferred from the claim text.