Semiconductor device having pad electrode equipped with low pass filter circuit
AssigneeMicron Technology, Inc.
InventorsNobuki Takahashi, Kohei Nakamura
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsNobuki Takahashi, Kohei Nakamura
Estimating the term…
An example apparatus includes a passgate circuit between first and second nodes, the passgate circuit having a plurality of transistors at least two of which are operatively connected in parallel in a first mode and operatively connected in series in a second mode. The plurality of transistors may include first and second transistors coupled in parallel between the first and second nodes and controlled in common by a first control signal activated in the first mode. The plurality of transistors may further include third and fourth transistors connected in series between the first and second nodes and controlled in common by a second control signal activated in the second mode.
An apparatus comprising a passgate circuit between first and second nodes, the passgate circuit having a plurality of transistors at least two of which are operatively connected in parallel in a first mode and operatively connected in series in a second mode.
An apparatus comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.