Metal Complex, Semiconductor Layer Comprising a Metal Complex and Organic Electronic Device

A metal complex of formula (I)

• Fe3⊕O(L⊖)3(AL)n (I),
• wherein
• L has formula (II)
• whereby
• R1 is selected from substituted C2 to C12 alkyl, substituted C6 to C19 aryl, substituted or unsubstituted C2 to C20 heteroaryl, or substituted or unsubstituted 6-membered heteroaryl;
• R2 is selected from substituted C6 to C19 aryl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted 6-membered heteroaryl;
• wherein
• at least one of the substituents of the substituted C1 to C12 alkyl, substituted C6 to C19 aryl, substituted C2 to C20 heteroaryl, or substituted 6-membered heteroaryl are independently selected from halogen, Cl, F, CN, partially or perfluorinated C1 to C8 alkyl, partially or perfluorinated C1 to C8 alkoxy;
• wherein
• L comprises at least two CF3 groups and/or at least one N atom;
• and wherein
• AL is an ancillary ligand which coordinates to the metal M;
• n is an integer selected from 0 to 2.