Euv lithography apparatus
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
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Abstract
An extreme ultra violet (EUV) light source apparatus includes an excitation laser inlet port configured to receive an excitation laser, and a first mirror configured to reflect the excitation laser that passes through a zone of excitation. A metal droplet is irradiated by the excitation laser.
Claims20
An extreme ultra violet (EUV) light source apparatus, comprising:
- an excitation laser inlet port configured to receive an excitation laser;
- and
- a first mirror configured to reflect the excitation laser that passes through a zone of excitation, wherein a metal droplet is irradiated by the excitation laser.
An extreme ultra violet (EUV) light source apparatus, comprising:
- an excitation laser inlet port configured to receive an excitation laser;
- a first mirror configured to reflect the excitation laser that passes through a zone of excitation, wherein a metal droplet is irradiated by the excitation laser;
- a second mirror configured to reflect the excitation laser reflected by the first mirror;
- and
- a third mirror configured to reflect the excitation laser reflected by the second mirror.
A method of operating an extreme ultra violet (EUV) light source apparatus, the EUV light source comprising an excitation laser inlet port for receiving an excitation laser and a first mirror, and the method comprising:
- introducing the excitation laser from the excitation laser inlet port;
- and
- reflecting the excitation laser that passes through a zone of excitation by the first mirror toward a target location inside the EUV light source apparatus.
Dependencies are inferred from the claim text.