Materials and methods for dry resist technology
AssigneeThe Johns Hopkins University
InventorsDavid Howard Fairbrother, Peter Corkery, Patrick Eckhert, Michael Tsapatsis, Kayley Waltz
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Abstract
The present disclosure relates to the dry deposition of thin, amorphous metal-imidazolate resist films via molecular layer deposition and the dry removal of patterned resists using β-diketonate-type compounds to produce an extreme ultraviolet (EUV) resist process that allows for more environmentally friendly, cost-effective, and high-resolution resist development.
Claims44
A method for vapor phase deposition of a non-crystalline thin film having a chemical formula of MLn on a substrate, wherein M is Zn+2, L is a ligand, and n is 2, the method comprising:
- pulsing a first precursor comprising an organometallic compound including the metal ion and a second precursor comprising the ligand sequentially into a flow-through reactor to create an organometallic vapor and a ligand vapor, and contacting the organometallic vapor and the ligand vapor with the substrate to form a non-crystalline thin film having the chemical formula of MLn on the substrate.
A non-crystalline thin film having a chemical formula of MLn, wherein M is a metal ion, L is a ligand, and n is a number of ligands.
The non-crystalline thin film of claim 41, wherein a pattern of the thin film has a:
- (a) feature thickness between about 2 and about 50 nanometers;
- (b) a spacing of about 20-30 nanometers or more;
- (c) line thickness of less than about 80 nm;
- (d) pitch of about 20 nanometers or more.
Dependencies are inferred from the claim text.